Method of making composite films inorganic comrounds

专利摘要:
1495987 Depositing monatomic layers in sequence INSTRUMENTARIUM OY 17 Nov 1975 [29 Nov 1974] 47212/75 Heading C7F Compound films are grown from the gaseous phase by depositing the chemical elements A and B of the compound in sequence and one at a time in vacuo or inert gas, the vapour pressure of the elements and temperature of the substrate and/or interaction time being controlled so that except for atoms A or B bonded individually to atoms B or A respectively of the preceding layer, all atoms of the element being deposited remain in or return to the gaseous phase, whereby each layer is deposited as a monatomic layer only. Vapour deposition or sputtering may be used, the substrate being arranged on a rotating holder which rotates in turn over sources of respective elements; the substrate is hotter than the sources whereby unbound atoms are back-evaporated; suitable apparatus is described. The substrate may be glass, and the following coatings are exemplified: (1) ZnS produced from evaporated Zn and evaporated S (2) SnO 2 , produced by evaporating Sn and reacting with O 2 plasma and (3) GaP, produced by evaporating both components.
公开号:SU810085A3
申请号:SU752193253
申请日:1975-11-28
公开日:1981-02-28
发明作者:Сунтола Туомо；Антсон Йорма
申请人:Ой Лохья Аб (Фирма)；
IPC主号:

专利说明:

(54) METHOD FOR OBTAINING COMPOUND FILMS OF INORGANIC
COMPOUNDS OF NIKES and. Preventing condensation on: her element after the formation of the atomic layer of this element. The process of painting atomic layers, such as element A and element B, where element A usually belongs to one of groups I, 11, ill or IV of the periodic system, and element B, respectively, from one of the groups Vil, VI or V, occurs as follows: typical films are I-VII, II-V1 or MI-V groups or oxides. Element A in the gas phase reacts with that grown by. surface, the surface atoms of which belong to group B, form one or the same. the night atomic layer due to the strong B – A bond created on the surface, while all the atoms of element A that additionally hit the surface will immediately return to the gas phase if the A – A bond is not strong enough to prevent the back evaporation of element A. When interacting with the gas phase of element A, the extrudable film can grow only by one atomic layer, even if the number of atoms on the surface significantly exceeds the amount corresponding to the monatomic layer. After the interaction of the growing surface with the gas phase of element A, it begins to interact with the gas phase of element B; at the same time, atoms A in the surface layer of the film re-enter into a strong bond B-A with atoms B directly striking it, and now the surface is covered by a single atomic layer of element B, and the bond B-B cannot interfere with the element Return to the gas phase. These alternating peaKi ffl steps are repeated until the necessary for each compound AB is obtained. FIG. 1 shows the device, a cross-section; in fig. 2 shows section A-A in FIG. 1. The device includes a chamber I, the substrates on which the film is grown, are mounted on a disk 3 rotating by means of a shaft 4. Under the disk 3 are placed sources of 5 and 6 vapor, which are sectors isolated from one another and each of which is designed for the necessary vapor pressure of the elementary components of the film being grown. When the disk 3 rotates, the substrates 2 alternately interact with the vapors of element A in source 5 and B in source 6, as a result of which the film grows, provided that the vapor pressure and temperature of substrate 2 is ensured. 4 Example. The cultivation of ZnS is carried out using the device with the following values of the system parameters: rotational speed 2 rev / s; substrate material granulated glass; substrate temperature 320 ° C; total bombardment by Zn atoms in one interaction between the surface and Zn vapors of about 5x10 at. / cm according to measurements using a special quartz crystal motor, which corresponds to an effective vapor pressure of about 10 mm Hg. and an equilibrium temperature of about 290 ° C. For source Sj, the equilibrium temperature of the source is 100 ° C, which corresponds to a vapor pressure of about 10 mm Hg. and total bombardment with Sj molecules of approximately 5x10 mol / cm. For ten "dinut this process gives a film with a thickness of about 0.27 JUIM. . Processes of 20 and 30 ltyn give films with a thickness of 0.54 mm and 0.80 jMM respectively. Example 2. The growth of SnO2 layers on granulated glass substrates is carried out under the following conditions: the substrate temperature is 300 ° C; the total number of Sn atoms per interaction with the Sn source is about 0.6x10 ax / cm; oxygen source of plasma type with a total pressure of 10-100 microns Hg and a plasma current of 40 mA. The total bombardment with Oj ions is equal to T-III ion / cm during interaction with the plasma source. At a rotation speed of 1 rev / s, the process gives an SnOj 600 A film growth in 25 min, i.e. the average value during growth is 0.4A per revolution. EXAMPLE 3. The growth of CaP layers on granulated glass substrates is carried out under the following conditions: substrate temperature C; the total number of Ca atoms when interacting with the source SaYu at. the total number of P molecules (most likely P4) of the bombarding surfaces when interacting with the phosphorus furnace is approximately 5 10 at / cm. For 25 minutes, a film with a thickness of 0.25 m is grown at a rotation speed of 1 rev / g. The average growth rate is 1.7 A per cycle. The proposed method provides self-balancing film growth, the theoretical growth rate cannot be exceeded, but approaching it occurs asymptomatically with increasing time (or pressure) interaction at each step of the reaction. The resulting ZnS films are selectively etched using an etchant containing 60 hours of HzRO4.5h. HNOt and one part HF at room temperature. Etching rate from 10 to
150 J4M / C in the direction of the surface for ZnS films with a thickness of 0.1-0.7} (m while in the direction perpendicular to the surface plane, no etching effect could be detected. Etching of SnOj films obtained by the EAS method turned out to be possible only by electrochemical methods.

权利要求:
Claims (1)
[1]
Invention Formula
The method of obtaining composite films of inorganic compounds by deposition on the substrate of vapors of elements entering the compound, obtained by heating elements in separate sources, characterized in that, in order to obtain a uniform film thickness, to improve the control of the stoichiometry of the obtained compound and to increase its chemical stability, deposition lead by alternating contact with the substrate vapors of at least one element, with a partial pressure, providing
the formation of a single atomic layer on the substrate, and at the temperature of the substrate, 1 higher than the temperature of the sources and preventing the element from condensing on it after the formation of the atomic layer of this element.

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法律状态:

优先权:

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申请号 | 申请日 | 专利标题

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FI743473A|FI52359C|1974-11-29|1974-11-29|Method and apparatus for growing composite thin films.|

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